W4N150
TRANSISTOR; TYPE: MOSFET; MATERIAL: SILICON; MAXIMUM POWER: 160,00 W; MAXIMUM VCEO VOLTAGE: 1500,00 V; MAXIMUM IC CURRENT: 4,00 A; ENCAPSULATION: TO-247; MANUFACTURER: ST MICROELECTRONICS; REFERENCE: W4N150 MOSFET CANAL N;
TRANSISTOR; TYPE: MOSFET; MATERIAL: SILICON; MAXIMUM POWER: 160,00 W; MAXIMUM VCEO VOLTAGE: 1500,00 V; MAXIMUM IC CURRENT: 4,00 A; ENCAPSULATION: TO-247; MANUFACTURER: ST MICROELECTRONICS; REFERENCE: W4N150 MOSFET CANAL N;
TRANSISTOR 75V 80A P75NF75 STMICROELECTRONICS – DENOMINATION: TRANSISTOR MATERIAL OF MAJOR IMPORTANCE: SILICON DIMENSIONS: 10X28.9MM TENSAO: 75V QUANTITY PHASE: 1 PHASE CURRENT: 80A FUNCTION: FEED DEVICE APPLICATION: JOFA REFERENCE: P75NF75 MANUFACTURER: STMICROELECTRONICS MATERIAL GROUP: IM0301000
THYRISTOR TYPE THYRISTOR: TRIAC; ASSEMBLY TYPE: PTH; BREAKING VOLTAGE: 800V; EFFECTIVE CURRENT: 16A; TRIGGER VOLTAGE: 1.3V; TRIGGER CHAIN: 50MA; TIP O CASE: TO-220AB; LENGTH: 4.6MM; WIDTH: 10.4MM; HEIGHT: 29.9MM; ELECTRICAL CONNECTION: WELDING TERMINAL BTA16-800BW ST
MOSFET TRANSISTOR; TRANSISTOR TYPE: N; ASSEMBLY TYPE: PTH; TRIGGER VOLTAGE SOURCE: ± 30V; DRAIN VOLTAGE SOURCE: 800V; DISSIPACATION CAPACITY: 70W; DRAIN CURRENT: 2.5A; INVOLVING TYPE: TO-220; DIAMETER: 3.75MM; LENGTH: 4.6MM; WIDTH: 10.4MM; HEIGHT: 28.9MM; ELECTRICAL CONNECTION: SOLID TERMINAL; REFERENCE / MANUFACTURER: STP3NK80Z; / STMICROELECTRONICS
INTEGRATED CIRCUIT; FUNCTION: VOLTAGE REGULATOR; FORMAT: RECTANGULAR; NUMBER PINS: 8 PINS; POWER SUPPLY VOLTAGE: 400V; CURRENT: 3MA; CURRENT TYPE: DC; INVOLUTION: DIP 8; INVOLVING MATERIAL: THERMOPLASTIC; FIXATION: PTH; REFERENCE / MANUFACTURER: VIPER22A-E / ST MICROELECTRONICS; VIPER22A-E