TRANSISTOR; TYPE: IGBT; MATERIAU: SILICIUM; TYPE JONCTION: NPN; PUISSANCE MAXIMALE: 13,60 KW; TENSION MAXIMALE VCEO: 4500,00 V; ICOMETRIE COURANT: 2100.00 A
We connect your company to the main manufacturers worldwide, reducing costs and delivery terms. Contact us to learn more!
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We connect your company to the main manufacturers worldwide, reducing costs and delivery terms. Contact us to learn more!
Manufacturer
SKU
Product family
Product model
Price
Availability
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