TRANSISTOR /
TYPE: POWER MOSFET /
JOINT: CHANNEL N /
POWER: 190 W /
CURRENT: 23 A /
ENCAPSULATION: TO-247AC /
TENSE BREAK VGSS: +/- 20 V ; TENSE BREAK VDSS: 250 V /
MATERIAL: SILICON /
REFERENCE: INTERNATIONAL RECTIFIER: IRFP254 ; VISHAY: IRFP254 /

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